Typical Physical Properties
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Purity Wt %
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SAW grade: > 99.9 Optical grade: 99.99
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Crystal Structure
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Hex. a= 4.914 Å c = 5.405 Å
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Growth Method
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Hydrothermal
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Hardness
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7.0 Moh’s
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Density
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2.684 g/cm3
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Melt Point
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1610 o C ( phase transition point: 573.1oC)
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Specific heat
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0.18 cal/gm
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Thermoelectric Constant
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1200 mV /o C @ 300 o C
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Thermal conductivity
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0.0033 cal/cm/ o C
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Thermal expansion (x10-6/ oC)
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a11: 13.71 a33: 7.48
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Index of Refraction
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1.544
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Q value
Acoustic velocity, SAW
Frequency constant, BAW
Piezoelectric coupling ,
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1.8 x 106 min.
3160 ( m/sec )
1661 ( kHz/mm )
K2 (%) BAW: 0.65 SAW: 0.14
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Inclusion
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IEC Grade II
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Standard Quartz Wafer Specifications
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Orientation
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Y, X or Z cut: Rotated to any value in the range 30o ~ 42.75o ± 5 min.
Primary flat: orientation specified by customer ± 30 min
Secondary Flat: orientation specified by customer.
Seed: located in the center: width < 5mm, height > 66mm
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Polished surface
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EPI polished on one side or two sides to Ra < 10 Å
Working Area: Wafer diameter minus 3 mm
BOW: < 20 mm for 3” wafer and 30 mm for 4” wafer
No chips out on working area. In the edge, chip width < 0.5 mm
Pit and scratches: < 3 per wafer or < 20 per 100 wafers
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Standard Thickness
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0.5 mm ± 0.05mm TTV < 5 mm
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Standard Diameter
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f 2” (50.8mm ) f 3” (76.2mm) f 4”(100mm) ±0.2 mm
Primary Flat : 22 ± 1.5 mm (f 3” ) 32 ± 3.0 mm ( f 4” )
Secondary Flat: 10 mm ±1.5 mm
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Production Capability
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20,000 wafer per month
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