Titanium-doped sapphire (Ti:sapphire) crystals combine supreme physical and optical properties with broadest lasing range. It's indefinitely long stability and useful lifetime added to the lasing over entire band of 660-1050 nm challenge "dirty" dyes in variety of applications. Medical laser systems, lidars, laser spectroscopy, direct femtosecond pulse generation by Kerr-type mode-locking - there are few of existing and potential applications.
The absorption band of Ti:Sapphire centered at 490 nm makes it suitable for variety of laser pump sources - argon ion, frequency doubled Nd:YAG and YLF, copper vapour lasers. Because of 3.2 µs fluorescence lifetime Ti:Sapphire crystals can be effectively pumped by short pulse flashlamps in powerful laser systems.
We have successfully produced large-sized (Dia.120x80mm) Ti:Sapphire by using the growth method of Temperature Gradient Technique (TGT). TGT is characterized by the capabilities of growing (0001) oriented sapphire with high doping level (a490=7.5cm-1) high gain, and high laser damage threshold. Pulsed, quasi-cw, cw, ps and fs lasing with high efficiency have been realized using TGT grown Ti: Sapphire. It can also meet current application such as in large aperture amplifiers for high power generation and laser fusion etc.
Basic Properties:
Chemical formula:
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Ti3+: Al2O3
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Crystal structure:
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Hexagonal a=4.758, c=12.991
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Density:
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3.98 g/cm3
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Melting point:
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2040oC
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Mohs hardness:
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9
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Thermal conductivity:
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52 W/m/k
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Laser action:
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4-Level Vibronic
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Fluorescence lifetime:
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3.2m s (T=300K)
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Tuning range:
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660 - 1050 nm
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Absorbtion range:
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400 - 600 nm
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Emission peak:
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795 nm
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Absorption peak:
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488 nm
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Refractive index:
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1.76 @ 800 nm
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Ti:Sapphire’s specifications:
Orientation:
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Optical axis C normal to rod axis
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Ti2O3 concentration:
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0.06 - 0.5wt %
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Figure Of Merit:
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>250
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End configurations:
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Flat/Flat or Brewster/Brewster ends
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Flatness:
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Lambda /10 @ 633 nm
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Parallelism:
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5 arc sec
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Surface finishing:
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10/5 scratch/dig to MIL-O-13830A
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Wavefront distortion:
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Lambda /4 per inch
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Note: AR Coating is available on request.